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= {This paper presents a calibration method of PAR Quantum Sensor. In theory PAR quantum sensor can be precise calibrated by spectroradiometers. The spectroradiometers were calibrated against standard lamps traceable to the National Standards. This method is validated by experiment. There are some conflicting views in different version specification on quantum sensor Li-cor. The is not any word explain the difference in instrument specification. Some explanations of the difference are presented in this study. There is no really quantum sensor for PAR measurement. The quantum sensor is nominal instrument. The instrument is really energy sensor , and the unit of quantum is calculated by equation. Furthermore , the coincidence between quantum and energy is validated. There are two sensitivity can be gained in calibration process. The error caused by unit transfer between quantum and energy can be omitted by using this two sensitivity .}, key = {Radiometers}, keywords = {Calibration;Electric lamps;Photosynthesis;Quantum optics;Sensors;}, note = {Energy sensor;Li cor;Photosynthetically active radiation;Quantum sensor;}, } @inproceedings {2003257511692 , language = {English}, copyright = {Compilation and indexing terms , Copyright 2012 Elsevier Inc.}, copyright = {Compendex}, title = {Quantum sensing using Type II InAs/GaSb superlattice for infrared detection}, journal = {Microelectronics Journal}, author = {Razeghi , Manijeh and Gin , Aaron and Wei , Yajun and Bae , Junjik and Nah , Jongbum}, volume = {34}, number = {5-8}, year = {2003} , pages = {405 410}, issn = {00262692} , abstract = {Large , regular arrays of bulk GaSb and InAs/GaSb Type II superlattice pillars have been fabricated by electron beam lithography and dry etching. A 2.5 keV electron beam lithography system and metal evaporation are used to form the Au mask on superlattice and bulk substrates. Dry etching of these materials has been developed with BCl 3:Ar, CH4:H2:Ar and cyclic CH4:H2:Ar/O2 plasmas. Etch temperatures were varied from 20 to 150 °C. The diameter of the superlattice pillars was below 50 nm with regular 200 nm spacing. Bulk GaSb pillars were etched with diameters below 20 nm. Areas of dense nanopillars as large as 500 μm × 500 μm were fabricated. The best height/ diameter aspect ratio was approximately 10:1. To date , these are the smallest diameter III -V superlattice pillar structures reported , and the first nanopillars in the InAs/GaSb material system. The basic theory of these devices and surface passivation with SiO 2 and Si3N4 thin films has also been discussed. © 2003 Elsevier Science Ltd . All rights reserved.}, key = {Semiconductor superlattices}, keywords = {Dry etching;Electron beam lithography;Fabrication;Infrared detectors; Passivation;Quantum theory;Semiconducting indium compounds;Semiconductor quantum wells;Thermal effects;Thin films;}, note = {Quantum sensing;}, URL = {http ://dx.doi.org /10.1016/ S0026 -2692(03) 00035-1},